通過采用先進的溝槽柵工藝技術和完美的結構設計,DT MOSFET實現大幅度降低電流傳導過程中的導通功率損耗。同時,電流在芯片元胞當中的流通會更加均勻穩定,其有效降低了柵極電荷(Qg),尤其是柵極漏極間的電荷(Qgd),從而在快速開關過程中降低開關功率損耗。通過采用這些先進的技術手段,DT MOSFET的FOM(Qg*Rdson)得以實現行業內的領先水平。

產品特點:

  • 低FOM(Rdson*Qg)
  • 高可靠性
  • 具有低的柵電荷

應用范圍:

  • 不間斷電源,逆變器
  • 交流/直流電源的同步整流
  • 電機驅動
產品V(BR)DSS(V)ID(A)RDS(ON)(mΩ max)*at VGS=(10V)RDS(ON)(mΩ max)*at VGS=(4.5V)V(GS)th-min(V)V(GS)th-max(V)Ciss(pF)Qg(nC)Package
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TSM10N06AT604515191.12.5113421DFN 5*6
TSJ10N06AT601015191.12.5113421SOP-8
TSP15N10A1001504.2-247700138TO-220
TSB15N10A1001504.2-247700138TO-263
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TSP12N10AT100551215.51.12.5245545TO-220
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TSU12N10A1005512-2.54245545TO-251
TSP12N10A1005512-2.54245545TO-220
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TSJ12N10A1001112-2.54245545SOP-8
TSG10N10AT1003623331.12.5113421DFN5x6
TSU10N10AT1003623331.12.5113421TO-251
TSJ10N10AT100823331.12.5113421SOP-8

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